IEEE Transactions on Semiconductor Manufacturing

November 1995, Volume 8, Issue 4

SPECIAL SECTION ON TCAD: PROCESS MODELING

FOREWORD

M. E. Law

SPECIAL SECTION PAPERS

Modeling of Chemical--Mechanical Polishing: A Review

G. Nanz and L. Camilletti

Quasi-Three-Dimensional Modeling of Sub-Micron LOCOS Structures

H. Park, P. Smeys, Z. H. Sahul, K. C. Saraswat, R. W. Dutton, and H. Hwang

Trajectory Split Method for Monte Carlo Simulation of Ion Implantation

W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, and S. Selberherr

An Accurate and Efficient Model for Boron Implants Through Thin Oxide Layers into Single-Crystal Silicon

S. J. Morris, S.-H. Yang, D. H. Lim, C. Park, K. M. Klein, M. Manassian, and A. F. Tasch, Jr.

Modeling Dynamic Clustering of Arsenic Including Non-Negligible Concentrations of Arsenic-Point Defect Pairs

H. Bauer, P. Pichler, and H. Ryssel

Rigorous Three-Dimensional Time-Domain Finite-Difference Electromagnetic Simulation for Photolithographic Applications

A. K. Wong and A. R. Neureuther

REGULAR ISSUE PAPERS

Thermal Modeling of a Wafer in a Rapid Thermal Processor

J.-M. Dilhac, N. Nolhier, C. Ganibal, and C. Zanchi

High Performance 3.3- and 5-V 0.5-&mgr;m CMOS Technology for ASIC's

I. C. Kizilyalli, M. J. Thoma, S. A. Lytle, E. P. Martin, Jr., R. Singh, S. C. Vitkavage, P. F. Bechtold, J. W. Kearney, M. M. Rambaud, M. S. Twiford, W. T. Cochran, L. R. Fenstermaker, R. Freyman, W. Sun, and A. Duncan

CORRESPONDENCE

A Manufacturable Process to Improve Thermal Stability of 0.25-&mgr;m Cobalt Silicided Poly Gate

Q. Wang, A. Lauwers, B. Deweerdt, R. Verbeeck, F. Loosen, and K. Maex

Yield Loss Mechanisms in MOS-Gated Power Devices

P. Venkatraman and B. J. Baliga

CALL FOR PAPERS

First International Workshop on Statistical Metrology

1995 INDEX