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"High-Reliability Through-Silicon Via (TSV) Solutions for Image Sensor Packaging" -- Belgacem Haba, Fellow and Chief Technology Officer, Interconnect, Components & Materials (ICM), Tessera

Presentation Slides: "High-Reliability Through Silicon Via (TSV) Solutions for Image Sensor Packaging" (1.2 MB PDF)

WEDNESDAY, January 13, 2010

  • 2151 Laurelwood Rd (Fwy 101 at Montague Expressway), Santa Clara, (408) 346-4620 -- click map at right.

        There is no doubt that the potential of imaging is astronomical. Current and potential markets include digital still cameras, business applications, Web-cams, cell phone cameras, security cameras, gaming, video, automotive and toys. In 2009, the industry shipped 2.5 billion image sensor units with an average selling price of $5 providing a total addressable market of $12B. This presentation will discuss image sensor and camera module trends and growth. It will trace the growing movement in the image sensor market from chip-on-board to wafer-level packaging for cost savings and other advantages. It also will trace the image sensor evolution toward wafer-level packaging and introduce through-silicon via (TSV) wafer-level chip-scale packaging, and how to address the barriers to adoption with a new approach.

    Speaker Biography:
        Belgacem Haba is a Tessera Fellow and chief technology officer for the Interconnect, Components & Materials (ICM) division. He is responsible for directing research and strategic development in leading-edge packaging technology. Haba came to Tessera from SiliconPipe Inc., a high-speed Internet start-up company which he co-founded. During his 20 year career, he has held management positions in research and development at Rambus, NEC Central Research Laboratories, and the IBM T.J. Watson Research Center. He has published over 100 articles, holds 100 U.S. patents and more than 140 international patents and patent applications. He is a member of the IEEE Components, Packaging, and Manufacturing Technology Society. Haba holds a bachelor's degree with honors in physics from the University of Bab-Ezouar, Algeria, master's degrees in applied physics and materials science and a doctorate in materials science and engineering from Stanford University.

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