IEEE Santa Clara Valley CPMT Society Chapter
"Silicon Carbide (SiC) Sensing Technology for Extreme Harsh Environments"
-- Debbie G. Senesky, Ph.D., University of California, Berkeley
Presentation Slides: "Silicon Carbide Sensing Technology for Extreme Harsh Environments" (1.4 MB PDF)
WEDNESDAY, October 12, 2011
PLEASE RESERVE IN ADVANCE --
- Buffet dinner served at 6:00 PM
($20 if reserved by Oct. 11); $10 for fulltime students and currently unemployed engineers; $5 more at the door;
- Presentation (no cost) at 6:45 PM (arrive by 6:35 PM)
Please register in advance for this event, using our IEEE Council's DoubleKnot registration site.
You may register yourself, plus others from your company/institution, for both dinner and presentation, or for only the presentation. You may make an on-line payment for the dinner, or arrange to pay at the door.
- For dinner and/or meeting: at the Doubleknot link above.
- Even if you're coming only for the presentation, we want you to sign up on our registration web site, so we can quicken the sign-in process and get everyone seated by 6:45 PM.
- 2151 Laurelwood Rd (Fwy 101 at Montague Expressway), Santa Clara, (408) 346-4620 -- click map at right.
This presentation discusses advances in SiC manufacturing technology including growth of amorphous SiC thin films, polycrystalline SiC thin films and high-temperature metallization. Results of fabricating micro-scale SiC sensors and operating SiC sensors within high temperature (600oC), dry steam and high shock environments are presented.
The stability of high-temperature metallization and ceramic packaging for SiC components will also be discussed.
Harsh environment sensors can be used to perform real-time, in-situ combustion monitoring leading to designs of power and propulsion systems (e.g. industrial gas turbines, and aircraft engines) with increased efficiencies, fuel flexibility and reduced CO2 emissions. Space exploration can be extended with high temperature, radiation-hardened materials, instrumentation and energy conversion devices using Silicon carbide (SiC), a ceramic, semiconductor material that is stable in high temperature, high radiation and chemically corrosive environments.
- Speaker Biography:
Debbie G. Senesky received the B.S. degree in mechanical engineering from the University of Southern California, Los Angeles, in 2001, and the M.S. and Ph.D. degrees in mechanical engineering from the University of California, Berkeley, in 2004 and 2007, respectively. From 2007 to 2008, she was a Microelectromechanical Systems Design Engineer for GE Sensing (formerly known as NovaSensor). She is currently a Research Specialist at the Berkeley Sensor and Actuator Center, University of California, Berkeley. Her research interests include the development of silicon carbide (SiC) micro- and nano-systems, harsh environment materials, sensor technology and energy conversion.
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